Nr. |
Year |
Article |
Synthesis Method |
Gas Mixture |
Substrate |
Product
|
Signature
|
1. |
2014 | Belén Maté, Isabel Tanarro, Miguel A. Moreno, Miguel Jiménez-Redondo, Rafael Escribano and Víctor J. Herrero
http://pubs.rsc.org/en/content/articlelanding/2014/fd/c3fd00132f |
RF ICP, 3.56 MHz, 40 W, 1h | 0.3 mbar, 40% CH4, 60% He | Si | a – C:H (film – thickness aprox. 3 μm) | 2.9 μm band |
2. |
2017 | Belén Maté, Germán Molpeceres, Miguel Jiménez-Redondo, Isabel Tanarro, and Víctor J. Herrero | RF ICP, 40 W, 15 min | 0.32 mbar, CH4, He | Si | a – C:H (film – thickness > 400 nm) | 3.4 μm band |
3. |
2015 | Ahmad Hamdan, Georges Al Makdessi, Joëlle Margot | Magnetized HF, 200MHz, 350W, 10 min | 0.27 Pa, 20%C2H2, 80% Ar | Si | a – C:H | … |
4. |
2004 | V. Mennella et al.; | Laser ablation + Hydrogenation | 10 mbar Ar | KBr | … | 3.4 μm band, 6.85 and 7.25 μm bands |
5. |
1999 | V. Mennella et al. |
Laser ablation + Hydrogenation
|
10 mbar Ar | KBr | a – C:H (chainlike aggregates of spherical grains,10 nm) | 3.4 μm band |
6. |
1993 | W. Lee, | AC electric discharge, 9.4 kV | 500 μm Hg, H, naphthalene (C10H8) | glass, sapphire inner tube | PAH (film) | 1460, 1380 cm-1, 2960, 2870 (-CH3), 2925, 2860 (-CH2-), 1700 (C=O) |
7. |
1999 | Furton, Laiho, & Witt | DC electric discharge (DC-PECVD), 1 kV, 3 mA, 60 min | 200 mTorr, 99.99% pure CH4, 5.0 sccm | salt, fused silica | a – C:H (film – thickness 200-300 nm) | 1450, 1375, 2922 cm-1, 3300 (C-H), 2100 (-CN) |
8. |
1987 | Sakata, A; Wada, S; | MW, unheated QCC, 300 W |
4 torr, CH4
|
quartz | film QCC (Quenched Carbonaceous Condensate) granular QCC, 450-500 nm | aprox 2900 cm-1, 1440, 1380, 1310 cm-1 220 nm, 3.42, 6.25, 7.27 μm |
9. |
1996 |
A. Scott, W. W. Duley
|
Laser Ablation (308 nm XeCl) | <1 Torr H2 |
KCl
|
a – C:H (protographitic islands 1–5 nm) PAH | 3.4, 6.9, 7.28 μm |
10. |
2016 | T. Mori, T. Sakurai, T. Sato, A. Shirakura, T. Suzuki
http://iopscience.iop.org/article/10.7567/JJAP.55.045503/meta |
DBD, AP-PECVD, 5 μs pulse width, 10 kV, 16-120 W, 2-15 kHz, 20 min | C2H2/N2, C2H2/He, 5l/min | Single crystalline silicon (100) wafers | a-C:H (film – thickness 0.5 – 37 µm) | … |
11. |
2016 | L. Gavilan, I. Alata, K. C. Le, T. Pino, A. Giuliani, and E. Dartois | ICP RF, 13.56 MHz, 100 W, 5 W reflected | <0.01 mbar, CH4 | MgF2 windows, Au and Cu grids | a – C:H (film – thickness aprox. 20 nm) | … |
12. |
2014 | I. Alata, G. A. Cruz-Diaz, G. M. Muñoz Caro, and E. Dartois |
RF, 2.45 GHz
|
CH4, CD4, 0.01 mbar |
ZnSe, MgF2
|
a – C:H (film – thickness order of µm) | IR – Bending: 1300 – 1500 cm-1, Stretching: 3100 – 2800 cm,sup>-1 |
13 |
2011 | M. Godard, G. Féraud, M. Chabot, Y. Carpentier, T. Pino, R. Brunetto, J. Duprat, C. Engrand, P. Bréchignac, L. d’Hendecourt, and E. Dartois | Microwave induced plasma, 2.45 GHz, minutes – 1 h | 0.01 mbar, Butadiene/CH4 + Ar | KBr, KCl | a – C:H (film – thickness 7 – 10 µm) | IR – Bending: 1300 – 1500 cm-1, Stretching: 3100 – 2800 cm-1 |
14 |
2010 | M. Godard and E. Dartois | Microwave induced plasma, 2.45 GHz, minutes – hours | 0.01 – 0.1 mbar, Methane, Acetylene, Butadiene, phenylacetylene, isobutane, toluene, limonene + H + Ar | quartz, KBr |
a – C:H (film – thickness order of µm)
|
IR – Stretching: 3.38 – 3.50 µm, CH2 bending: 6.89 µm, CH3 bending: 7.27 µm |
15 |
2005 | E. Kovacevic, I. Stefanovic, J. Berndt, Y. J. Pendleton and J. Winter | CCP RF, 13,56 MHz, 10 – 50 W, 20 min | 0.1 mbar, Acetylene, Ar and N or O | KBr windows | a-C:H materials (hydrocarbon nanoparticles) | 3.4 µm band, 6.86 and 7.25 µm bands |
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